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Techniques are presented that include determining, for data to be written to a nonvolatile memory, a location in the nonvolatile memory to which the data should be written based at least on one or more wear metrics corresponding to the location. The…
BACKGROUND OF THE INVENTION Solid-state memory devices encompass rewritable non-volatile memory devices which may use electronic circuitry for storing data. Currently, solid-state memory devices start replacing conventional storage devices such as ha…
BACKGROUND Erasable memories may have erasable elements that can become unreliable after a predetermined number of erase cycles. Thus, if one cell is erased dramatically more than other cells, that cell may be prone to earlier failure than the rest o…
前面说过,闪存寿命是以P/E次数来计算的,而WL就是确保闪存内每个块被写入的次数相等的一种机制.若没有这个机制,SSD内的闪存颗粒就无法在同一时间内挂掉,那对用户来说就是灾难.       会出现这种情况的原因在于,用户在LBA空间里的数据更新速度是不同的,有部分是经常需要更新,而有些却长期不需要变更,因此若没有WL,很显然那些经常被更新的数据所在的闪存寿命会首先被消耗完毕,而不怎么需要变更的数据所在的闪存损耗就要小得多.为了避免出现这种状况,便需要WL这个机制来保持SSD内的每个闪存颗粒的磨损…
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BACKGROUND OF THE INVENTION Conventional NAND Flash memories move data in the background to write over an entire span uniformly. The background data movement is called wear leveling. A process performing the background data movement is often referred…
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https://en.wikipedia.org/wiki/Secure_Digital#Technical_details Secure Digital (SD) is a non-volatile memory card format developed by the SD Card Association (SDA) for use in portable devices. The standard was introduced in August 1999 by joint effort…
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